Quantum dot of single electron memory device and method for fabricating thereof

ABSTRACT

A method for fabricating a quantum dot, which can be used to fabricate a single electron memory device. The method includes forming a first insulation layer on a semiconductor layer, then forming a second insulation layer on the first insulation layer. Next, the second insulation layer is patterned to form an opening to partially expose the upper surface of the first insulation layer. Using the opening in the second insulation layer, a silicon ion is then implanted into the first insulation layer through the opening by using a tilt angle ion implantation method. Finally, the semiconductor layer is treated to re-crystallize the silicon ion implanted into the first insulation layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method forfabricating thereof, and more particularly, to a single electronsemiconductor device and method thereof.

2. Background of the Related Art

In response to the semiconductor industry's desire to further integratesemiconductor devices, a single electron memory device has beendeveloped which is programmable and erasable by using just a single or afew electrons.

FIG. 1 shows a structure of a single electron memory device inaccordance with the related art where a semiconductor layer 100 made ofsilicon or gallium-arsenic (GaAs) is formed with a tunneling insulationfilm 102 on the upper surface of the semiconductor layer 100. Thetunneling insulation film 102 is formed by a silicon oxide film having athickness of 2-3 nm. Next, a quantum dot 104 is formed on the uppersurface of the tunneling insulation film 102 of a fine-sizedpolycrystalline silicon pattern having a width of about 50 nm and aheight of about 50 nm. The size of the quantum dot 104 is preferablysuch that a single electron or several electrons at the most can tunnelto generate a Coulomb Blockade phenomenon.

A control insulation film 106 is formed on the upper surface of thequantum dot 104. The control insulation film 106 is a silicon oxide filmor a silicon nitride film formed with a thickness of about 2-3 nm. Next,a control gate electrode 108 is formed on the upper surface of thecontrol insulation film 106.

An n-type or a p-type of impurity ion-implanted source region 110 and adrain region. 112 are formed in the semiconductor layer 100 at the bothsides of the control gate electrode 108. Then, an interlayer insulationfilm 114 is formed at the upper surface and side surface of the controlgate electrode 108, and a planarization layer 116 is formed on the uppersurface of the interlayer insulation film 114. A contact hole 117 isthen formed on the upper surface of the source region 110 and the drainregion 112 and a conductive plug 118 is formed through the contact hole117, where the conductive plug is connected with a metal wiring layer120.

The operational principle of a single electron memory having theconstruction of FIG. 1 is the same as that of an EEPROM (ElectricallyErasable Programmable Read Only Memory) of the related art. But, unlikean EEPROM of the related art, the single electron memory can vary athreshold voltage with merely single electron or several electrons atthe most and is operable at a lower voltage than a EEPROM of the relatedart because when a write voltage higher than the threshold voltage isapplied to the control gate electrode, an inversion layer is formed in achannel region and an electron from the source region is induced intothe channel, reducing the channel conductance.

This occurs because one or several electrons when in the inversion layerof the channel region, tunnel into the quantum dot (which becomes afloating gate) and one by one the electrons tunnel through a thintunneling insulation layer at room temperature. As the electrons tunnelinto the floating quantum dot, the threshold voltage changes.

Ideally, it is preferred that a single electron tunnels for programming.However, since it is difficult to detect the change in the size of thethreshold voltage, three or four electrons are often used to change thethreshold voltage by about 1V to program the memory.

FIGS. 2A through 2H show a series of processes of the method forfabricating a single electron memory device in accordance with therelated art.

As shown in FIG. 2A, a plurality of device isolation regions 201 areformed at predetermined portions of a semiconductor layer 200. Thedevice isolation regions 201 are called field regions and the otherregions which are not the device isolation regions 201 are called activeregions. Next, a tunneling insulation layer 202 is formed on an uppersurface of the semiconductor layer 200 including the field region 201,then a polysilicon layer 203 is formed on the upper surface of thetunneling insulation layer 202.

As shown in FIGS. 2B and 2C, the polysilicon layer 203 is patterned toform a polysilicon layer pattern 203 a, the surface of the polysiliconlayer pattern 203 a is oxidized to form a silicon oxide film 204 on thesurface of the polysilicon layer pattern 203 a as illustrated in FIG.2C. Thereafter, as shown in FIG. 2D, the silicon oxide film 204 isselectively etched using a buffered HF solution to reduce thepolysilicon layer pattern 203 a to a smaller size polysilicon layerpattern 203B.

The processes of FIGS. 2C and 2D are repeatedly performed until, asshown in FIG. 2E, a quantum dot 203 c is formed having a length that isat most 50 nm. Next, as shown in FIG. 2F, a control insulation film 205is formed on the upper surface of the polysilicon layer pattern 203 c,the tunneling insulation layer 202 and the isolation regions 201, andthen a polysilicon layer 206 is deposited on the upper surface of the acontrol insulation film 205.

Next, as shown in FIG. 2G, the polysilicon layer 206 and the controlinsulation film 205 are patterned to form a control gate electrode 206a, source 207 and drain regions 208 are then formed on both sides of thecontrol gate electrode 206 a by implanting an impurity ion into thesemiconductor layer 200, and an interlayer insulation film 209 is formedon the entire upper surface of the structure formed on the semiconductorlayer 200. Then, a planarization layer 210 is formed on the uppersurface of the interlayer insulation film 209, a contact hole is thenformed on both the source 207 and drain regions 208 and each contacthole is filled with a conductive material to form a conductive plug 211as shown in FIG. 2H. Finally, a metal wiring layer 212 is formed on theupper surface of the conductive plug 211, thereby completing thefabricating of a single electron dot memory device.

However, the above method for fabricating a single electron memorydevice has various problems. For example, a very fine pattern mustformed to form the quantum dot, but the smallest line feature that cancurrently be formed by using the currently available photolithographyprocesses are about 0.1 μm. Accordingly, it is difficult to fabricate aquantum dot having a size less than 50 nm by using the currentlyavailable photolithography and an etching process which starts withpattern line features of about 0.1 μm.

Further, as mentioned above in the related art method, a comparativelylarge A polysilicon layer pattern is formed, and then the size of thepolysilicon layer pattern is reduced by using iterations of oxidationand wet etching. Accordingly, this method has a problem with theevenness of the size of the quantum dot because of the inexactness ofthe oxidation and wet etching and a problem with the reproduction of theprocess because of the iterations of oxidation and wet etching requiredto reduce the size of the quantum dot.

The above references are incorporated by reference herein whereappropriate for appropriate teachings of additional or alternativedetails, features and/or technical background.

SUMMARY OF THE INVENTION

An object of the invention is to solve at least the above problemsand/or disadvantages and to provide at least the advantages describedhereinafter.

Another object of the present invention is to provide a quantum dothaving a more consistent size.

Another object of the present invention is to provide a quantum dothaving an improved reproductiveness of the process.

A further object of the present invention is to provide a singleelectron memory device.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described herein,there is provided a method for fabricating a quantum dot including thesteps of forming a first insulation layer on a semiconductor layer,forming a second insulation layer on the first insulation layer,patterning the second insulation layer to form an opening of ‘T’-shapeand partially exposing the upper surface of the first insulation layer,implanting a silicon ion into the first insulation layer through theopening by using a tilt angle ion implantation method, thermallytreating the semiconductor layer to re-crystallize the silicon ionimplanted into the first insulation film.

In order to achieve the above objects, in the above method forfabricating a quantum dot, the recrystallizing refers to a thermaltreatment of the semiconductor layer at a temperature of about 600˜700°C.

In order to achieve the above objects, in the above method forfabricating a quantum dot, the first insulation film is a silicon oxidefilm.

In order to achieve the above objects, in the above method forfabrcating a quantum dot, in the step of forming the first insulationfilm, the first insulation film has the thickness of about 30 nm.

In order to achieve the above objects, in the above method forfabricating a quantum dot, in the step of implanting the silicon ion,the silicon ion is implanted with the depth of about 5 nm from the uppersurface of the silicon oxide film.

In order to achieve the above objects, in the above method forfabricating a quantum dot, the second insulation film is a nitride film.

In order to achieve the above objects, in the above method forfabricating a quantum dot, the nitride film has the thickness of about30 nm.

In order to achieve the above objects, there is also provided a methodfor fabricating a single electron memory device including the steps offorming a first insulation layer on a semiconductor layer, forming asecond insulation layer on the first insulation layer, patterning thesecond insulation layer to form an opening of ‘T’-shape and partiallyexposing the upper surface of the first insulation layer, implanting asilicon ion into the first insulation layer through the opening by usinga tilt angle ion implantation method, thermally treating thesemiconductor layer to re-crystallize the silicon ion implanted into thefirst insulation film and forming a quantum dot, removing the secondinsulation film, forming a control gate electrode of polysilicon layerpattern on the upper surface of the first insulation film, patterningthe first insulation film to have the same size of the control gateelectrode, and forming a source and a drain regions in the semiconductorlayer at both sides of the control gate electrode.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, the re-crystallizing refersto a thermal treatment of the semiconductor layer at a temperature ofabout 600˜700° C.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, the first insulation filmis a silicon oxide film.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, in the step of forming thefirst insulation film, the first insulation film has the thickness ofabout 30 nm.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, in the step of implantingthe silicon ion, the silicon ion is implanted with the depth of about 5nm from the upper surface of the silicon oxide film.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, the second insulation filmis a nitride film.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, the nitride film has thethickness of about 30 nm.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, in the step of removing thenitride film, the nitride film is removed by using a hot phosphoric acidsolution by wet etching.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, in the step of implantingthe silicon ion, the silicon ion is implanted into the first insulationfilm so that the concentration of the silicon ion is 10²¹ atoms/cm³.

In order to achieve the above objects, in the above method forfabricating a single electron memory device, the quantum dot has thediameter of about 10 nm.

To further achieve the above objects, a method for fabricating a quantumdot includes forming a first insulation layer on an upper surface of asemiconductor layer, forming a second insulation layer on an uppersurface of the first insulation layer, patterning the second insulationlayer to form an opening to partially expose the upper surface of thefirst insulation layer, implanting an ion into the first insulationlayer through the opening by using a tilt angle ion implantation method,andrecrystallizing the implanted ion in the first insulation layer.

To further achieve the above objects, a method for fabricating a singleelectron memory device includes forming a first insulation layer on anupper surface of a semiconductor layer, forming a second insulationlayer on an upper surface of the first insulation layer, patterning thesecond insulation layer to form an opening to partially expose the uppersurface of the first insulation layer, implanting an ion into the firstinsulation layer through the opening by using a tilt angle ionimplantation method, recrystallizing the ion implanted into the firstinsulation layer and forming a quantum dot, removing the secondinsulation layer, forming a control gate electrode on the upper surfaceof the first insulation layer, patterning the first insulation layer tothe same width as the control gate electrode, and forming source anddrain regions in the semiconductor layer at both sides of the controlgate electrode.

To further achieve the above objects, a single electron memory deviceincludes a semiconductor layer, a first insulation layer on an uppersurface of the semiconductor layer, a second insulation layer on anupper surface of the first insulation layer, and a recrystallizedimplanted ion in the first insulation layer.

Additional advantages, objects, and features of the invention will beset forth in part in the description which follows and in part willbecome apparent to those having ordinary skill in the art uponexamination of the following or may be learned from practice of theinvention. The objects and advantages of the invention may be realizedand attained as particularly pointed out in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described in detail with reference to thefollowing drawings in which like reference numerals refer to likeelements wherein:

FIG. 1 shows a structure of a single electron memory device inaccordance with a conventional art;

FIGS. 2A through 2H show a series of processes of the method forfabricating a single electron memory device in accordance with theconventional art; and

FIGS. 3A through 3F show a series of processes of a method forfabricating a single electron memory device and of a method forfabricating a quantum dot in accordance with the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Reference will now be made in detail to the preferred embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings.

FIGS. 3A through 3F illustrate a preferred embodiment method of thepresent invention for fabricating a single electron memory device and apreferred embodiment method for fabricating a quantum dot.

In FIG. 3A, a device isolation region 300 a is formed in a semiconductorlayer 300, then a silicon oxide film 301 is formed on the upper surfaceof the semiconductor layer 300, where the silicon oxide film 301 has athickness of about 30 nm.

Next, as illustrated in FIG. 3B, a nitride film 302 having the thicknessof more than 300 nm is formed on the silicon oxide film 301, then anopening 303 is formed by partially etching the nitride film 302, whichexposes the upper surface of the silicon oxide film 301. The opening 303is preferably formed in a ‘T’ shape with a long axis pattern 303 a, anda short axis pattern 303 b where the short axis pattern is formedprotrusively from the central portion of the long axis pattern 303 a.The opening can be any shape which meets the requirements of a tiltangle ion implantation such as “L”, “E”, etc.

Referring to FIG. 4B, the thickness of the nitride film pattern isdenoted by ‘a’. Preferably, the longest portion b1 of the pattern of theopening 303 is equal to the value obtained by adding the width of thelong axis pattern 303 a and the length of the short axis pattern 303 b,and the short length b2 is the same as the width of the long axispattern 303 a. The length of each axis pattern being the relativelylonger side, while the width of each axis pattern being the relativelyshorter side.

FIG. 3C is a sectional view taken along line of IIc—IIIc of FIG. 3B. Asshown in FIG. 3C, silicon ions are implanted into the silicon oxide film301 through the opening 303 by using a tilt angle ion implantationmethod having a tilt angle of θ to form a silicon ion implantationregion 304. Any suitable ion for a quantum dot may also be adequate. Thesilicon ion implantation region 304 is formed only in the silicon oxidefilm 301 which is related to the short axis pattern 303 b. That is, ionimplantation shadowing occurs in the portion of the long axis pattern303 a of the opening 303, due to the tilt angle ion implantation suchthat the shadowed silicon ions, or the ions not implanted through theopening 303, are implanted into the silicon nitride film 302, ratherthan into the silicon oxide film 301.

For the convenience of understanding a more detailed description thereonwill now be given with reference to FIGS. 4A and 4B.

FIG. 4A is an enlarged view of the portion indicated by a circle ‘A’ ofFIG. 3C. An ion implantation shadowing region length B is determined bythe thickness a of the nitride film 302 and the ion implantation tiltangle θ, as expressed by B=a*tan(θ). Accordingly, the silicon ion can beimplanted into the silicon oxide film only when the lengths (b1) of theopening are greater than the length of the ion implantation shadowingregion B.

As shown in FIG. 4A, since the length of the opening b1 is greater thanthe length of the ion implanting region B or a*tan(θ), the silicon ionsare implanted into the silicon oxide film 301, thus forming a quantumdot. As shown in FIG. 4B, which is a vertical-sectional view taken alongline of IVb-IVb of FIG. 3B, the length of the opening b2 is not greaterthan the length of the ion implanted shadowing region B or a*tan(θ),therefore the silicon ions are implanted on the nitride film 302 and notimplanted into the silicon oxide film 301 and do not form a quantum dot.Therefore, in

FIG. 4A, ions are implanted into the silicon oxide film 301 to form aquantum dot, but in FIG. 4B are not implanted into the silicon oxidefilm 301 and therefore a quantum dot is not formed.

In a preferred embodiment of the present invention the size of siliconion implanted region B, the length of the opening b1, b2, the tilt angleθ in ion implanting and the thickness a of the nitride film aredetermined to coincide with a nitride film which has a thickness ofabout 30 nm for a single electron memory device. Also preferably, thestrength of the ion implantation energy is set so that the silicon ionimplanted region 304 is formed at a depth of about 5 nm from the uppersurface of the silicon oxide film 301, since the silicon oxide film 301at the upper portion of the silicon ion 304 becomes a tunneling oxidefilm and the thickness of the tunneling oxide film is set depending onthe depth at which the silicon ion is implanted.

In the present invention, in order for the tunneling oxide film to havethe thickness of 5 nm, ion implantation is carried out so that thesilicon ion can be distributed at the depth of about 5 nm from the uppersurface of the silicon oxide film 301. Also, the concentration of thesilicon ion in the silicon ion implanted region 304 is preferably abouton the order of 10^(2l) atoms/cm³.

Next, as shown in FIG. 3D, the nitride film 302 is preferably removed byusing a hot phosphoric acid solution, then the semiconductor layer 300is preferably subjected to a thermal treatment, which causes the siliconions in the silicon ion implanted region 304 to recrystallize where thetemperature for the thermal treatment is preferably about 700˜800° C.After undergoing the recrystallizing process, the silicon ions arerecrystallized, forming a silicon quantum dot having the diameter ofless than about 10 nm. Next, as shown in FIG. 3E, a polysilicon layer306 is formed on the upper surface of the silicon oxide film 301.

Then, as shown in FIG. 3F, the polysilicon layer 306 is patterned toform a control gate electrode 306 a, and the silicon oxide film 301 ispatterned to form a tunneling insulation film 301 a. Next, an impurityion is implanted into the semiconductor layer 300 using the control gateelectrode 306 a as a mask, thereby forming a source region 307 and adrain region 308 on both sides of the control gate electrode 306 a.

Thereafter, an interlayer insulation film 309, which is preferably asilicon at oxide film, is formed on the upper surface of the source 307and the drain regions 308 and the upper surface of the control gateelectrode 306 a preferably by a vapor deposition method. Next, aplanarization layer 310 is formed on the upper surface of the interlayerinsulation film 309.

Next, the planarization layer 310 and the interlayer insulation film 309are selectively etched to form contact holes at the upper surface of thesource 307 and the drain regions 308 and then the contact holes arefilled with a conductive material, thereby forming conductive plugs 311.Finally, a metal wiring 312 is formed-on the upper surface of theconductive plug 311 and the upper surface of the planarization layer310, thereby completing the fabrication of a single electron device.

The method for fabricating a quantum dot and a device thereof, asdescribed above, lead to a consistent quantum dot size and an improvedreproductiveness for fabricating a quantum dot. This in turn leads toimproved reliability of a single electron memory device. Further, sincea quantum dot having a size of less than 10 nm can be fabricated, astable Coulomb Blockade phenomenon can occur even at a room temperature,so that an ultra-highly integrated memory of more than 4 Gbit can befabricated by adopting the present invention. Moreover, since thequantum dot has a very small size and the tunneling insulation film isvery thin, the single electron memory device is operable even at a verylow voltage and is quick about programming and erasing.

The foregoing embodiments and advantages are merely exemplary and arenot to be construed as limiting the present invention. The presentteaching can be readily applied to other types of apparatuses. Thedescription of the present invention is intended to be illustrative, andnot to limit the scope of the claims. Many alternatives, modifications,and variations will be apparent to those skilled in the art. In theclaims, means-plus-function clauses are intended to cover the structuresdescribed herein as performing the recited function and not onlystructural equivalents but also equivalent structures.

What is claimed is:
 1. A method for fabricating a quantum dot,comprising: forming a first insulation layer on an upper surface of asemiconductor layer; forming a second insulation layer on an uppersurface of the first insulation layer; patterning the second insulationlayer to form an opening to partially expose the upper surface of thefirst insulation layer; implanting an ion into the first insulationlayer through the opening by using a tilt angle ion implantation method;and recrystallizing the implanted ion in the first insulation layer. 2.The method according to claim 1, wherein the formation of the openingcomprises: a long axis pattern; and a short axis pattern, wherein theshort axis pattern is formed protrusively from a central portion of thelong axis pattern.
 3. The method according to claim 1, wherein theimplanted ion comprises silicon ions.
 4. The method according to claim3, wherein the silicon ions are implanted into the first insulationlayer at a concentration on the order of 10²¹ atoms/cm³.
 5. The methodaccording to claim 1, wherein the recrystallizing of the implanted ioncomprises thermal treatment of the semiconductor layer at a temperatureof about 600˜700° C.
 6. The method according to claim 1, wherein thefirst insulation layer comprises silicon oxide.
 7. The method accordingto claim 1, wherein the first insulation layer is formed to a thicknessof about 30 nm.
 8. The method according to claim 1, wherein the ion isimplanted with a depth of about 5 nm from an upper surface of the firstinsulation layer.
 9. The method according to claim 1, wherein the secondinsulation layer comprises a nitride film.
 10. The method according toclaim 9, further comprising removing the nitride film by wet etchingusing a hot phosphoric acid solution.
 11. The method according to claim1, wherein the second insulation layer is formed to a thickness of about30 nm.
 12. The method according to claim 1, wherein the quantum dot isformed to a diameter of about 10 nm.
 13. A method for fabricating asingle electron memory device, comprising: forming a first insulationlayer on an upper surface of a semiconductor layer; forming a secondinsulation layer on an upper surface of the first insulation layer;patterning the second insulation layer to form an opening to partiallyexpose the upper surface of the first insulation layer; implanting anion into the first insulation layer through the opening by using a tiltangle ion implantation method; recrystallizing the ion implanted intothe first insulation layer and forming a quantum dot; removing thesecond insulation layer; forming a control gate electrode on the uppersurface of the first insulation layer; patterning the first insulationlayer to the same width as the control gate electrode; and formingsource and drain regions in the semiconductor layer at both sides of thecontrol gate electrode.
 14. The method according to claim 13, whereinthe formation of the opening comprises: a long axis pattern; and a shortaxis pattern, wherein the short axis pattern is formed protrusively froma central portion of the long axis pattern.
 15. The method according toclaim 13, wherein the implanted ion comprises silicon ions.
 16. Themethod according to claim 15, wherein the silicon ions are implantedinto the first insulation layer at a concentration on the order of 10²¹atoms/cm³.
 17. The method according to claim 13, wherein therecrystallizing of the implanted ion comprises thermal treatment of thesemiconductor layer at a temperature of about 600˜700° C.
 18. The methodaccording to claim 13, wherein the first insulation layer comprisessilicon oxide.
 19. The method according to claim 13, wherein the firstinsulation layer is formed to a thickness of about 30 nm.
 20. The methodaccording to claim 13, wherein the ion is implanted with a depth ofabout 5 nm from an upper surface of the first insulation layer.
 21. Themethod according to claim 13, wherein the second insulation layercomprises a nitride film.
 22. The method according to claim 21, furthercomprising removing the nitride film by wet etching using a hotphosphoric acid solution.
 23. The method according to claim 13, whereinthe second insulation layer is formed to a thickness of about 30 nm. 24.The method according to claim 13, wherein the quantum dot is formed to adiameter of about 10 nm.